IAUCN04S6N009TATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

104 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7345 pF @ 25 V

Power Dissipation (Max)

178W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

N-Channel

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

330A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

0.89mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

3V @ 90µA

Mounting Type

Surface Mount

Supplier Device Package

PG-LHDSO-10-2

Package / Case

10-LSOP (0.209", 5.30mm Width) Exposed Pad

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IAUCN04