IAUCN04S7L023HATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™ 7

Part Status

Active

Vgs(th) (Max) @ Id

1.8V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2518pF @ 20V

Power - Max

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

2 N-Channel

Qualification

AEC-Q101

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tj)

Rds On (Max) @ Id, Vgs

2.34mOhm @ 50A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-56

Packaging

Tape & Reel (TR); Cut Tape (CT)