Component information

IAUCN04S7N054HATMA1

Infineon Technologies IAUCN04S7N054HATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PG-TDSON-8-57.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Series
OptiMOS™ 7
Part Status
Active
Vgs(th) (Max) @ Id
3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
798pF @ 20V
Power - Max
40W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Configuration
2 N-Channel (Dual)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
62A (Tj)
Rds On (Max) @ Id, Vgs
5.41mOhm @ 30A, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-57
Packaging
Tape & Reel (TR); Cut Tape (CT)

Documentation and references

Manufacturer datasheet ↗

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