Component information

IAUS300N08S5N012ATMA1

Infineon Technologies IAUS300N08S5N012ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerSMD, Gull Wing. Supplier Device Package: PG-HSOG-8-1.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
OptiMOS™
Part Status
Active
Gate Charge (Qg) (Max) @ Vgs
231 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16250 pF @ 40 V
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 275µA
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOG-8-1
Package / Case
8-PowerSMD, Gull Wing
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
IAUS300

Documentation and references

Manufacturer document ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number
Chat on WhatsApp