Component information

IAUTN08S5N012LATMA1

Infineon Technologies IAUTN08S5N012LATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerSFN. Supplier Device Package: PG-HSOF-8-2.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Series
OptiMOS™ 5
Part Status
Active
Vgs(th) (Max) @ Id
3.3V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
15340pF @ 40V
Power - Max
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Configuration
2 N-Channel, Common Drain, Common Source
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
300A (Tj)
Rds On (Max) @ Id, Vgs
1.15mOhm @ 100A, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Supplier Device Package
PG-HSOF-8-2
Packaging
Tape & Reel (TR); Cut Tape (CT)

Documentation and references

Manufacturer datasheet ↗

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