Component information
IAUTN08S5N012LATMA1
Infineon Technologies IAUTN08S5N012LATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerSFN. Supplier Device Package: PG-HSOF-8-2.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- OptiMOS™ 5
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3.3V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 15340pF @ 40V
- Power - Max
- 375W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel, Common Drain, Common Source
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 80V
- Current - Continuous Drain (Id) @ 25°C
- 300A (Tj)
- Rds On (Max) @ Id, Vgs
- 1.15mOhm @ 100A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSFN
- Supplier Device Package
- PG-HSOF-8-2
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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