Component information
IAUTN08S7N006ATMA1
Infineon Technologies IAUTN08S7N006ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerDFN. Supplier Device Package: PG-HSOF-8-9.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- OptiMOS™ 7
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3.2V @ 318µA
- Gate Charge (Qg) (Max) @ Vgs
- 298 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 20690 pF @ 40 V
- Power Dissipation (Max)
- 393W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 80 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 350A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 7V, 10V
- Rds On (Max) @ Id, Vgs
- 0.57mOhm @ 100A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-HSOF-8-9
- Package / Case
- 8-PowerDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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