IAUTN15S6N025TATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6 Power-Transistor

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

139 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9900 pF @ 75 V

Power Dissipation (Max)

357W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

150 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

245A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 100A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-HDSOP-16-2

Package / Case

16-PowerSOP Module

Packaging

Tape & Reel (TR); Cut Tape (CT)