Component information
IGB110S101XTMA1
Infineon Technologies IGB110S101XTMA1: Single FETs, MOSFETs. Package / Case: 4-PowerVDFN. Supplier Device Package: PG-VSON-4-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolGaN™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id
- 2.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs
- 4.4 nC @ 5 V
- Vgs (Max)
- ±6.5V
- Input Capacitance (Ciss) (Max) @ Vds
- 340 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 15W (Tc)
- Technology
- GaNFET (Gallium Nitride)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta), 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-VSON-4-3
- Package / Case
- 4-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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