IGB110S10S1XTMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolGaN™

Part Status

Active

Rds On (Max) @ Id, Vgs

11mOhm @ 10A, 5V

Vgs(th) (Max) @ Id

2.9V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

3.4 nC @ 5 V

Vgs (Max)

±6.5V

Input Capacitance (Ciss) (Max) @ Vds

340 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Ta), 15W (Tc)

Technology

GaNFET (Gallium Nitride)

Operating Temperature

-40°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Supplier Device Package

PG-TSON-4-2

Package / Case

4-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)