Component information
IGT65R035D2ATMA1
Infineon Technologies IGT65R035D2ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerSFN. Supplier Device Package: PG-HSOF-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolGaN™ G5
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.6V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs
- 7.7 nC @ 3 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 540 pF @ 400 V
- Power Dissipation (Max)
- 167W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 49A (Tc)
- Rds On (Max) @ Id, Vgs
- 42mOhm @ 13A
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-HSOF-8
- Package / Case
- 8-PowerSFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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