Component information
IHW50N65R6XKSA1
IHW50N65R6XKSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Input Type
- Standard
- Manufacturer
- Infineon Technologies
- Gate Charge
- 199 nC
- Packaging
- Tube
- Td (on/off) @ 25°C
- 21ns/261ns
- Part Status
- Active
- Test Condition
- 400V, 50A, 10Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Reverse Recovery Time (trr)
- 108 ns
- Current - Collector (Ic) (Max)
- 100 A
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Current - Collector Pulsed (Icm)
- 150 A
- Mounting Type
- Through Hole
- Vce(on) (Max) @ Vge, Ic
- 1.6V @ 15V, 50A
- Package / Case
- TO-247-3
- Power - Max
- 251 W
- Supplier Device Package
- PG-TO247-3
- Switching Energy
- 1.5mJ (on), 660µJ (off)
- Base Product Number
- IHW50
Documentation and references
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