Component information
IMBF170R1K0M1XTMA1
IMBF170R1K0M1XTMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 5.7V @ 1.1mA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 5 nC @ 12 V
- Series
- CoolSiC™
- Vgs (Max)
- +20V, -10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 275 pF @ 1000 V
- Part Status
- Active
- Power Dissipation (Max)
- 68W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 1700 V
- Supplier Device Package
- PG-TO263-7-13
- Current - Continuous Drain (Id) @ 25°C
- 5.2A (Tc)
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Drive Voltage (Max Rds On, Min Rds On)
- 12V, 15V
- Base Product Number
- IMBF170
- Rds On (Max) @ Id, Vgs
- 1000mOhm @ 1A, 15V
Documentation and references
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