IMBF170R650M1XTMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolSiC™

Part Status

Active

Vgs(th) (Max) @ Id

5.7V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs

8 nC @ 12 V

Vgs (Max)

+20V, -10V

Input Capacitance (Ciss) (Max) @ Vds

422 pF @ 1000 V

Power Dissipation (Max)

88W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V, 15V

Rds On (Max) @ Id, Vgs

650mOhm @ 1.5A, 15V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-13

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IMBF170