IMBG120R078M2HXTMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolSiC™ G2

Part Status

Active

Vgs(th) (Max) @ Id

5.1V @ 2.8mA

Gate Charge (Qg) (Max) @ Vgs

20.6 nC @ 18 V

Vgs (Max)

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds

700 pF @ 800 V

Power Dissipation (Max)

158W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

78.1mOhm @ 8.9A, 18V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-12

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IMBG120R078