Component information
IMBG120R220M1HXTMA1
IMBG120R220M1HXTMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 5.7V @ 1.6mA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 9.4 nC @ 18 V
- Series
- CoolSiC™
- Vgs (Max)
- +18V, -15V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 312 pF @ 800 V
- Part Status
- Active
- Power Dissipation (Max)
- 83W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 1200 V
- Supplier Device Package
- PG-TO263-7-12
- Current - Continuous Drain (Id) @ 25°C
- 13A (Tc)
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Rds On (Max) @ Id, Vgs
- 294mOhm @ 4A, 18V
- Base Product Number
- IMBG120
Documentation and references
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