Component information
IMCQ120R017M2HXTMA1
Infineon Technologies IMCQ120R017M2HXTMA1: Single FETs, MOSFETs. Package / Case: 22-PowerBSOP Module. Supplier Device Package: PG-HDSOP-22.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolSiC™ G2
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 17.1mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id
- 5.1V @ 12.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 91.1 nC @ 18 V
- Vgs (Max)
- +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds
- 3730 pF @ 800 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 580W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-HDSOP-22
- Package / Case
- 22-PowerBSOP Module
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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