IMDQ65R007M2HXUMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolSiC™

Part Status

Active

Rds On (Max) @ Id, Vgs

6.1mOhm @ 146.3A, 20V

Vgs(th) (Max) @ Id

5.6V @ 29.7mA

Gate Charge (Qg) (Max) @ Vgs

179 nC @ 18 V

Vgs (Max)

+23V, -7V

Input Capacitance (Ciss) (Max) @ Vds

6359 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

937W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

196A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 20V

Mounting Type

Surface Mount

Supplier Device Package

PG-HDSOP-22-1

Package / Case

22-PowerBSOP Module

Packaging

Tape & Reel (TR); Cut Tape (CT)