Component information
IMSQ120R053M2HHXUMA1
Infineon Technologies IMSQ120R053M2HHXUMA1: FET, MOSFET Arrays. Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad. Supplier Device Package: PG-HDSOP-16-221.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- CoolSiC™ G2
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 53mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id
- 5.1V @ 4.1mA
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 0V
- Input Capacitance (Ciss) (Max) @ Vds
- 1010pF @ 800V
- Power - Max
- 234W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
- Supplier Device Package
- PG-HDSOP-16-221
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
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