Component information

IMT40R045M2HXTMA1

Infineon Technologies IMT40R045M2HXTMA1: Single FETs, MOSFETs. Package / Case: 8-PowerSFN. Supplier Device Package: PG-HSOF-8-2.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
CoolSiC™
Part Status
Active
Rds On (Max) @ Id, Vgs
56.2mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id
5.6V @ 3.2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 200 V
FET Type
N-Channel
Power Dissipation (Max)
3.8W (Ta), 150W (Tc)
Technology
SiCFET (Silicon Carbide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN
Packaging
Tape & Reel (TR); Cut Tape (CT)

Documentation and references

Manufacturer datasheet ↗

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