Component information
IMW65R007M2HXKSA1
Infineon Technologies IMW65R007M2HXKSA1: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: PG-TO247-3-U06.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 6.1mOhm @ 146.3A, 20V
- Vgs(th) (Max) @ Id
- 5.6V @ 29.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 179 nC @ 18 V
- Vgs (Max)
- +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds
- 6359 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 625W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 20V
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO247-3-U06
- Package / Case
- TO-247-3
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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