Component information
IMW65R015M2HXKSA1
Infineon Technologies IMW65R015M2HXKSA1: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: PG-TO247-3-40.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolSiC™ Gen 2
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 5.6V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs
- 79 nC @ 18 V
- Vgs (Max)
- +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds
- 2792 pF @ 400 V
- Power Dissipation (Max)
- 341W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 20V
- Rds On (Max) @ Id, Vgs
- 13.2mOhm @ 64.2A, 20V
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO247-3-40
- Package / Case
- TO-247-3
- Packaging
- Tube
- Base Product Number
- IMW65R015
Documentation and references
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