IMW65R040M2HXKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolSiC™ Gen 2

Part Status

Active

Vgs(th) (Max) @ Id

5.6V @ 4.6mA

Gate Charge (Qg) (Max) @ Vgs

28 nC @ 18 V

Vgs (Max)

+23V, -7V

Input Capacitance (Ciss) (Max) @ Vds

997 pF @ 400 V

Power Dissipation (Max)

172W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 20V

Rds On (Max) @ Id, Vgs

36mOhm @ 22.9A, 20V

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3-40

Package / Case

TO-247-3

Packaging

Tube

Base Product Number

IMW65R040