Component information

IMWH170R450M1XKSA1

Infineon Technologies IMWH170R450M1XKSA1: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: PG-TO247-3-U04.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
CoolSiC™
Part Status
Active
Rds On (Max) @ Id, Vgs
390mOhm @ 2A, 15V
Vgs(th) (Max) @ Id
5.7V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 12 V
Vgs (Max)
15V, 12V
Input Capacitance (Ciss) (Max) @ Vds
506 pF @ 1000 V
FET Type
N-Channel
Power Dissipation (Max)
111W (Tc)
Technology
SiCFET (Silicon Carbide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
10A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-U04
Package / Case
TO-247-3
Packaging
Tube

Documentation and references

Manufacturer datasheet ↗

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