Component information
IMX9T110
IMX9T110 component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 560 @ 10mA, 3V
- Manufacturer
- Rohm Semiconductor
- Power - Max
- 300mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 350MHz
- Part Status
- Not For New Designs
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 500mA
- Package / Case
- SC-74, SOT-457
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Supplier Device Package
- SMT6
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 20mA, 500mA
- Base Product Number
- IMX9
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
Documentation and references
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