Component information
IMYH200R075M1HXKSA1
Infineon Technologies IMYH200R075M1HXKSA1: Single FETs, MOSFETs. Package / Case: TO-247-4. Supplier Device Package: PG-TO247-4-U04.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 98mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id
- 5.5V @ 7.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 64 nC @ 18 V
- Vgs (Max)
- +20V, -7V
- Power Dissipation (Max)
- 267W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 2000 V
- Current - Continuous Drain (Id) @ 25°C
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO247-4-U04
- Package / Case
- TO-247-4
- Packaging
- Tube
- Base Product Number
- IMYH200
Documentation and references
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