Component information
IMZ1AT108
IMZ1AT108 component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 6V
- Manufacturer
- Rohm Semiconductor
- Power - Max
- 300mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 180MHz, 140MHz
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 150mA
- Package / Case
- SC-74, SOT-457
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- SMT6
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Base Product Number
- IMZ1
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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