Component information
IPB015N04NGATMA1
IPB015N04NGATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 200µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 250 nC @ 10 V
- Series
- OptiMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 20000 pF @ 20 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 250W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 155°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 40 V
- Supplier Device Package
- PG-TO263-3
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- IPB015
- Rds On (Max) @ Id, Vgs
- 1.5mOhm @ 100A, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ