IPB180P04P4L02ATMA2

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ P2

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

286 nC @ 10 V

Vgs (Max)

+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds

18700 pF @ 25 V

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

P-Channel

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.2V @ 410µA

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-3

Package / Case

TO-263-7, D2PAK (6 Leads + Tab)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPB180