IPB200N25N3GATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

86 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7100 pF @ 100 V

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250 V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 64A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPB200