Component information
IPB320P10LMATMA1
IPB320P10LMATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 5.55mA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 219 nC @ 10 V
- Series
- OptiMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 11000 pF @ 50 V
- Part Status
- Active
- Power Dissipation (Max)
- 3.8W (Ta), 300W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 100 V
- Supplier Device Package
- PG-TO263-3
- Current - Continuous Drain (Id) @ 25°C
- 6.5A (Ta), 63A (Tc)
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- IPB320P
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 54A, 10V
Documentation and references
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