IPD048N06L3GATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Active

Vgs(th) (Max) @ Id

2.2V @ 58µA

Gate Charge (Qg) (Max) @ Vgs

50 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8400 pF @ 30 V

Power Dissipation (Max)

115W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 90A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-311

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPD048N