Component information
IPD10N03LA
IPD10N03LA component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 20µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 11 nC @ 5 V
- Series
- OptiMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1358 pF @ 15 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 52W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 25 V
- Supplier Device Package
- PG-TO252-3-11
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- IPD10N
- Rds On (Max) @ Id, Vgs
- 10.4mOhm @ 30A, 10V
Documentation and references
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