IPD30N10S3L34ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Not For New Designs

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1976 pF @ 25 V

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

N-Channel

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

31mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.4V @ 29µA

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPD30N10