IPD35N10S3L26ATMA2

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

39 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700 pF @ 25 V

Power Dissipation (Max)

71W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

100 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.4V @ 39µA

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR); Cut Tape (CT)