Component information
IPD65R650CEAUMA1
IPD65R650CEAUMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.5V @ 210µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 23 nC @ 10 V
- Series
- CoolMOS™ CE
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 440 pF @ 100 V
- Part Status
- Not For New Designs
- Power Dissipation (Max)
- 86W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 650 V
- Supplier Device Package
- PG-TO252-3
- Current - Continuous Drain (Id) @ 25°C
- 7A (Tc)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- IPD65R650
- Rds On (Max) @ Id, Vgs
- 650mOhm @ 2.1A, 10V
Documentation and references
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