Component information
IPD80R2K7C3AATMA1
IPD80R2K7C3AATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 1.5 nC @ 10 V
- Mfr
- Infineon Technologies
- Vgs (Max)
- ±20V
- Series
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 290 pF @ 100 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power Dissipation (Max)
- 42W (Tc)
- Part Status
- Active
- Operating Temperature
- -40°C ~ 150°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 800 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 2A (Tc)
- Supplier Device Package
- TO-252AA (DPAK)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs
- 2.7Ohm @ 1.2A, 10V
- Base Product Number
- IPD80R2
- Vgs(th) (Max) @ Id
- 3.9V @ 250µA
Documentation and references
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