Component information
IPD90N10S406ATMA1
Infineon Technologies IPD90N10S406ATMA1: Single FETs, MOSFETs. Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63. Supplier Device Package: PG-TO252-3-313.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- OptiMOS™
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 68 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 4870 pF @ 25 V
- Power Dissipation (Max)
- 136W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 6.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 90µA
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3-313
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- IPD90
Documentation and references
Documentation can be discussed with your inquiry.
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