Component information

IPG16N10S461ATMA1

Infineon Technologies IPG16N10S461ATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PG-TDSON-8-4.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Series
OptiMOS™
Part Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
490pF @ 25V
Power - Max
29W
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
16A
Rds On (Max) @ Id, Vgs
61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3.5V @ 9µA
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
IPG16N10

Documentation and references

Manufacturer document ↗

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