IPG20N04S4L11ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™

Part Status

Not For New Designs

Vgs(th) (Max) @ Id

2.2V @ 15µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1990pF @ 25V

Power - Max

41W

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

2 N-Channel (Dual)

Qualification

AEC-Q101

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

11.6mOhm @ 17A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-4

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPG20N