IPG20N04S4L18AATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™ T2

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1071pF @ 25V

Power - Max

26W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Rds On (Max) @ Id, Vgs

18mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.2V @ 8µA

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-10

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPG20N