Component information
IPG20N06S2L35AATMA1
Infineon Technologies IPG20N06S2L35AATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PG-TDSON-8-10.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- OptiMOS™
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 790pF @ 25V
- Power - Max
- 65W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 20A (Tc)
- Rds On (Max) @ Id, Vgs
- 35mOhm @ 15A, 10V
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 8-PowerVDFN
- Supplier Device Package
- PG-TDSON-8-10
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- IPG20N
Documentation and references
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