Component information
IPG20N06S2L35ATMA1
IPG20N06S2L35ATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 2V @ 27µA
- Manufacturer
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V
- Series
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 790pF @ 25V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 65W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 55V
- Package / Case
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C
- 20A
- Supplier Device Package
- PG-TDSON-8-4
- Rds On (Max) @ Id, Vgs
- 35mOhm @ 15A, 10V
- Base Product Number
- IPG20N
Documentation and references
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