Component information
IPI80N06S207AKSA2
IPI80N06S207AKSA2 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 110 nC @ 10 V
- Mfr
- Infineon Technologies
- Vgs (Max)
- ±20V
- Series
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 3400 pF @ 25 V
- Packaging
- Tube
- Power Dissipation (Max)
- 250W (Tc)
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 55 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Supplier Device Package
- PG-TO262-3-1
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Rds On (Max) @ Id, Vgs
- 6.6mOhm @ 68A, 10V
- Base Product Number
- IPI80N06
- Vgs(th) (Max) @ Id
- 4V @ 180µA
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ