Component information
IPN50R950CEATMA1
IPN50R950CEATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.5V @ 100µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 10.5 nC @ 10 V
- Series
- CoolMOS™ CE
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 231 pF @ 100 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 5W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 500 V
- Supplier Device Package
- PG-SOT223
- Current - Continuous Drain (Id) @ 25°C
- 6.6A (Tc)
- Package / Case
- TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On)
- 13V
- Base Product Number
- IPN50R950
- Rds On (Max) @ Id, Vgs
- 950mOhm @ 1.2A, 13V
Documentation and references
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