IPN60R2K0PFD7SATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

CoolMOS™PFD7

Part Status

Active

Vgs(th) (Max) @ Id

4.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

3.8 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

134 pF @ 400 V

Power Dissipation (Max)

6W (Tc)

FET Type

N-Channel

Operating Temperature

-40°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-3-1

Package / Case

TO-261-3

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPN60R2