Component information

IPN95R3K7P7ATMA1

Infineon Technologies IPN95R3K7P7ATMA1: Single FETs, MOSFETs. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: PG-SOT223.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
CoolMOS™ P7
Part Status
Active
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 400 V
Power Dissipation (Max)
6W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
950 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 800mA, 10V
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
TO-261-4, TO-261AA
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
IPN95R3

Documentation and references

Manufacturer document ↗

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