IPP011N03LF2SAKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

StrongIRFET™2

Part Status

Active

Rds On (Max) @ Id, Vgs

1.05mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

336 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15100 pF @ 15 V

FET Type

N-Channel

Power Dissipation (Max)

3.8W (Ta), 375W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

46A (Ta), 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-U05

Package / Case

TO-220-3

Packaging

Tube