IPP022N12NM6AKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Rds On (Max) @ Id, Vgs

2.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.6V @ 275µA

Gate Charge (Qg) (Max) @ Vgs

141 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000 pF @ 60 V

FET Type

N-Channel

Power Dissipation (Max)

3.8W (Ta), 395W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

120 V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Packaging

Tube