Component information
IPP028N08N3GXKSA1
IPP028N08N3GXKSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.5V @ 270µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 206 nC @ 10 V
- Series
- OptiMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 14200 pF @ 40 V
- Part Status
- Last Time Buy
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 80 V
- Supplier Device Package
- PG-TO220-3
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Package / Case
- TO-220-3
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Base Product Number
- IPP028
- Rds On (Max) @ Id, Vgs
- 2.8mOhm @ 100A, 10V
Documentation and references
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