Component information

IPP030N06NF2SAKMA1

IPP030N06NF2SAKMA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
3.05mOhm @ 70A, 10V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
3.3V @ 80µA
Series
StrongIRFET™
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 30 V
FET Type
N-Channel
Power Dissipation (Max)
3.8W (Ta), 150W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 119A (Tc)
Supplier Device Package
PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package / Case
TO-220-3

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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